DEVELOPER COMMUNITY

Publications on tiberCAD multiscale simulation tool

• Optoelectronic simulation and thickness optimization of energetically disordered organic solar cells
  H. Fallahpour, A. Gagliardi, D. Gentilini, A. Zampetti, F. Santoni, M. Auf der Maur, A. Di Carlo
  Journal of Comp. Electronics, Volume 13, Issue 44, pp 933-942 (December 2014)

• Modeling and simulation of energetically disordered organic solar cells
  H. Fallahpour, A. Gagliardi, F. Santoni, D. Gentilini, A. Zampetti, M. Auf der Maur and A. Di Carlo
  J. Appl. Phys. 116, 184502 (2014)

• Charge trapping models of resistance switching in organic bistable devices with embedded nanoparticles
  Francesco Santoni, Alessio Gagliardi, Matthias Auf der Maur, Aldo Di Carlo
  Organic Electronics 15, 2792–2801 (2014)

• The relevance of correct injection model to simulate electrical properties of organic semiconductor
  Francesco Santoni, Alessio Gagliardi, Matthias Auf der Maur, Aldo Di Carlo
  Organic Electronics 15, 1557–1570 (2014)

• Trap-assisted tunneling in InGaN/GaN single-quantum-well light-emitting Diodes
  M. Auf der Maur, B. Galler, I. Pietzonka, M. Strassburg, H. Lugauer and A. Di Carlo
  Appl. Phys. Lett. 105, 133504 (2014)

• Model of a realistic InP surface quantum dot extrapolated from atomic force microscopy results
  Daniele Barettin, Roberta De Angelis, Paolo Prosposito, Matthias Auf der Maur, Mauro Casalboni and Alessandro Pecchia
  Nanotechnology 25 (2014) 195201 (9pp)

• Coupling atomistic and continuous media models for electronic device simulation
  Matthias Auf der Maur, Alessandro Pecchia, Gabriele Penazzi, Fabio Sacconi, Aldo Di Carlo
  Journal of Computational Electronics, Volume 12, Issue 4, pp 553-562 (2013)

• Strain evolution in GaN nanowires: From free-surface objects to coalesced Templates
  M. Hugues, P. A. Shields, F. Sacconi, M. Mexis, M. Auf der Maur et al.
  J. Appl. Phys. 114, 084307 (2013)

• AlGaN/GaN HEMT degradation: An Electro-Thermo-Mechanical Simulation
  M. Auf der Maur, A. Di Carlo
  IEEE Transactions on Electron Devices, Vol. 60, Issue 10 (2013), pages 3142-3148

• Wetting layer states in low densityInAs/InGaAs quantum dots from sub-critical InAs coverages
  L. Seravalli, G. Trevisi, P. Frigeri, F. Rossi, E. Buffagni and C. Ferrari
  J. Phys. D: Appl. Phys. 46 (2013) 315101

• Calculation of metamorphic two-dimensional quantum energy system: Application to wetting layer states in InAs/InGaAs metamorphic quantum dot nanostructures
  L. Seravalli, G. Trevisi, and P. Frigeri
  J. Appl. Phys. 114, 184309 (2013)

• Optoelectronic Properties of Nanocolumn InGaN/GaN LEDs
  Fabio Sacconi, Matthias Auf der Maur, Aldo Di Carlo
  IEEE TRANSACTIONS ON ELECTRON DEVICES, VOL. 59, NO. 11, NOVEMBER 2012

• The Multiscale Paradigm in Electronic Device Simulation
  Matthias Auf der Maur, Gabriele Penazzi, Giuseppe Romano, Fabio Sacconi, Alessandro Pecchia, and Aldo Di Carlo
  IEEE TRANSACTIONS ON ELECTRON DEVICES, VOL. 58, NO. 5, MAY 2011

• Calculation of optical properties of a quantum dot embedded in a GaN/AlGaN nanocolumn
  G. Penazzi A. Pecchia, F. Sacconi, A. Di Carlo
  Superlattices and Microstructures 47 (2010) 123-128

• Properties of wetting layer states in low density InAs quantum dot nanostructures emitting at 1.3 µm: Effects of InGaAs capping
  L. Seravalli, C. Bocchi, G. Trevisi and P. Frigeri
  J. Appl. Phys. 108, 114313 (2010)

• Concurrent multiscale simulation of electronic devices
  M. Auf der Maur, F. Sacconi, G. Penazzi, G. Romano, M. Povolotskyi, A. Pecchia and A. Di Carlo
  Journal of Computational Electronics Volume 9, Numbers 3-4, 262-268

• Quantum confinement dependence of the energy splitting and recombination dynamics of A and B excitons in a GaN/AlGaN quantum well
  F. Stokker-Cheregi, A. Vinattieri, E. Feltin, D. Simeonov, J.-F. Carlin, R. Butté, N. Grandjean, F. Sacconi, M. Povolotskyi, A. Di Carlo, M. Gurioli
  PHYSICAL REVIEW B 79, 245316 (2009)

• Elasticity theory of pseudomorphic heterostructures grown on substrates of arbitrary thickness
  Michael Povolotskyi and Aldo Di Carlo
  JOURNAL OF APPLIED PHYSICS 100, 063514 (2006)